Indium Selenide films were deposited by pulsed laser deposition (PLD) with a NdYAG
laser under vacuum condition. During the deposition, the substrates were kept at
room temperature. The typical thicknesses of films were 200nm, 800 nm. The films
were analyzed by X-ray diffraction for the crystallographic, the surface morphology of
the film were investigated by AFM. It has been observed that grain growth depend on
film thickness. The optical properties were characterized in the ultraviolet–visible
region employing optical transmission, absorption, band gap. The direct optical band
gap value for the films was found to be of the order of (2.2, 2.1) eV for thickness
(200,800) nm respectively at room temperature.
Keywords: Indium Selenide Pulsed Laser Deposition, Optical Properties, Band Gap.
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